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DISCRETE SEMICONDUCTORS
DATA SHEET
MBD128
BAW56S High-speed double diode array
Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21
Philips Semiconductors
Product specification
High-speed double diode array
FEATURES * Small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 450 mA. APPLICATIONS * General purpose switching in e.g. surface mounted circuits. DESCRIPTION The BAW56S consists of two dual high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package.
1 Top view Marking code: A1t. 2 3
MSA370
BAW56S
PINNING PIN 1 2 3 4 5 6 cathode (k1) cathode (k2) common anode (a1) cathode (k3) cathode (k4) common anode (a2) DESCRIPTION
6
5
4
handbook, halfpage
6
5
4
1
2
3
MGL159
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. One or more diodes loaded. total power dissipation storage temperature junction temperature Ts = 60 C; note 1 - - - - -65 -65 4 1 0.5 350 +150 +150 A A A mW C C single diode loaded; see Fig.2 all diodes loaded; see Fig.2 - - - - - 85 75 250 100 450 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
1997 Oct 21
2
Philips Semiconductors
Product specification
High-speed double diode array
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage VR = 0; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 30 1 30 50 2 4 1.75 715 855 1 1.25 PARAMETER CONDITIONS
BAW56S
MAX.
UNIT
mV mV V V nA A A A pF ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. One or more diodes loaded. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 255 UNIT K/W
1997 Oct 21
3
Philips Semiconductors
Product specification
High-speed double diode array
GRAPHICAL DATA
BAW56S
300 IF (mA) 200 single diode loaded
MBK148
handbook, halfpage
300
MBG382
IF (mA)
(1) (2) (3)
200
all diodes loaded 100 100
0 0 100 Ts (C) 200
0
0
1
VF (V)
2
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1997 Oct 21
4
Philips Semiconductors
Product specification
High-speed double diode array
BAW56S
105 IR (nA) 10
4
MGA884
handbook, halfpage
2.5 Cd (pF) 2.0
MBH191
V R = 75 V
1.5 10
3
max
75 V 1.0
10
2
25 V 0.5 typ typ
10
0 0 100 T j ( o C) 200 0 5 10 15 20 VR (V) 25
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1997 Oct 21
5
Philips Semiconductors
Product specification
High-speed double diode array
BAW56S
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R S = 50
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1997 Oct 21
6
Philips Semiconductors
Product specification
High-speed double diode array
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BAW56S
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997 Oct 21
7
Philips Semiconductors
Product specification
High-speed double diode array
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BAW56S
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 21
8
Philips Semiconductors
Product specification
High-speed double diode array
NOTES
BAW56S
1997 Oct 21
9
Philips Semiconductors
Product specification
High-speed double diode array
NOTES
BAW56S
1997 Oct 21
10
Philips Semiconductors
Product specification
High-speed double diode array
NOTES
BAW56S
1997 Oct 21
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/00/02/pp12
Date of release: 1997 Oct 21
Document order number:
9397 750 02875

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